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TPC8129,LQ(S

Toshiba Semiconductor and Storage
TPC8129,LQ(S Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 9A 8SOP
$0.31
Available to order
Reference Price (USD)
2,500+
$0.27985
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Vgs (Max): +20V, -25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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