IRLB8721PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 62A TO220AB
$1.24
Available to order
Reference Price (USD)
1+
$1.05000
10+
$0.93200
100+
$0.74670
500+
$0.59008
1,000+
$0.47619
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IRLB8721PBF, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1077 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STP160N75F3
Rohm Semiconductor
RUQ050N02HZGTR
Toshiba Semiconductor and Storage
TPC8129,LQ(S
Diodes Incorporated
ZXMN2F34FHTA
Vishay Siliconix
IRLI630GPBF
onsemi
NTD4404N1
Diodes Incorporated
DMN6075SQ-13
Rectron USA
RM17N800HD
onsemi
NTMFS5H400NLT1G
Vishay Siliconix