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ZXMN10A08DN8TA

Diodes Incorporated
ZXMN10A08DN8TA Preview
Diodes Incorporated
MOSFET 2N-CH 100V 1.6A 8-SOIC
$0.91
Available to order
Reference Price (USD)
500+
$0.52492
1,000+
$0.41994
2,500+
$0.38057
5,000+
$0.35432
12,500+
$0.34120
25,000+
$0.33404
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO

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