SI3590DV-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 30V 2.5A 6-TSOP
$0.95
Available to order
Reference Price (USD)
3,000+
$0.38985
6,000+
$0.36455
15,000+
$0.35190
30,000+
$0.34500
Exquisite packaging
Discount
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The SI3590DV-T1-GE3 by Vishay Siliconix is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Vishay Siliconix s SI3590DV-T1-GE3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
- Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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