ZXMHC10A07T8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
$1.01
Available to order
Reference Price (USD)
1,000+
$0.87725
2,000+
$0.81675
5,000+
$0.78650
10,000+
$0.77000
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s ZXMHC10A07T8TA, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how ZXMHC10A07T8TA can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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