FS45MR12W1M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE 1200V 50A
$168.32
Available to order
Reference Price (USD)
1+
$133.67000
24+
$127.35125
Exquisite packaging
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Optimize your electronic circuits with Infineon Technologies s FS45MR12W1M1B11BOMA1, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how FS45MR12W1M1B11BOMA1 can elevate your design and operational efficiency.
Specifications
- Product Status: Last Time Buy
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1BM-2
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