ZVN3320FTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 200V 60MA SOT23-3
$0.48
Available to order
Reference Price (USD)
3,000+
$0.18098
6,000+
$0.17053
15,000+
$0.16008
30,000+
$0.15276
75,000+
$0.15200
Exquisite packaging
Discount
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Boost your electronic applications with ZVN3320FTA, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, ZVN3320FTA meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 60mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 330mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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