PMPB95ENEA/FX
NXP Semiconductors
NXP Semiconductors
NEXPERIA PMPB95ENEA - 80 V, SING
$0.12
Available to order
Reference Price (USD)
3,000+
$0.19096
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with PMPB95ENEA/FX, a reliable Transistors - FETs, MOSFETs - Single by NXP Semiconductors. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PMPB95ENEA/FX meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
Vishay Siliconix
SIRA10BDP-T1-GE3
STMicroelectronics
STW26NM60N
IXYS
IXFT88N30P
onsemi
FDB12N50TM
Rectron USA
RM130N30D3
Vishay Siliconix
SQJ164ELP-T1_GE3
Infineon Technologies
BTS247ZE3043AKSA1
Infineon Technologies
IRF3805STRL-7PP
onsemi
NVMFS5C604NLWFAFT1G
Infineon Technologies