TK62N60X,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 61.8A TO247
$10.72
Available to order
Reference Price (USD)
1+
$10.24000
30+
$8.39467
120+
$7.57575
510+
$6.34725
1,020+
$5.73300
Exquisite packaging
Discount
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Enhance your circuit performance with TK62N60X,S1F, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TK62N60X,S1F for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
- Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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