XPW6R30ANB,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 45A 8DSOP
$2.08
Available to order
Reference Price (USD)
1+
$2.08000
500+
$2.0592
1000+
$2.0384
1500+
$2.0176
2000+
$1.9968
2500+
$1.976
Exquisite packaging
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Boost your electronic applications with XPW6R30ANB,L1XHQ, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, XPW6R30ANB,L1XHQ meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerVDFN
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