MTD3055VL
onsemi
onsemi
MOSFET N-CH 60V 12A TO252-3
$1.10
Available to order
Reference Price (USD)
2,500+
$0.64238
5,000+
$0.61204
12,500+
$0.59036
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with MTD3055VL, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, MTD3055VL provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STB150N3LH6
NXP USA Inc.
BUK9E6R1-100E,127
Toshiba Semiconductor and Storage
TK160F10N1L,LXGQ
Infineon Technologies
BSS87H6327XTSA1
STMicroelectronics
STE145N65M5
Panjit International Inc.
PJD4NA60_R2_00001
NXP USA Inc.
BUK7908-40AIE127
Infineon Technologies
IPL65R230C7AUMA1
Torex Semiconductor Ltd
XP152A12C0MR-G
Microchip Technology