IRFD9014PBF
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 1.1A 4DIP
$1.45
Available to order
Reference Price (USD)
1+
$0.97000
10+
$0.86000
100+
$0.67970
500+
$0.52710
1,000+
$0.41613
2,500+
$0.38839
5,000+
$0.36897
Exquisite packaging
Discount
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IRFD9014PBF by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRFD9014PBF ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 660mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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