WG50N65DHWQ
WeEn Semiconductors
WeEn Semiconductors
IGBT TRENCH FD ST 650V 91A TO247
$2.31
Available to order
Reference Price (USD)
1+
$2.30907
500+
$2.2859793
1000+
$2.2628886
1500+
$2.2397979
2000+
$2.2167072
2500+
$2.1936165
Exquisite packaging
Discount
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Choose WG50N65DHWQ Single IGBTs by WeEn Semiconductors for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. WeEn Semiconductors's reputation for quality makes WG50N65DHWQ a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 91 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 278 W
- Switching Energy: 1.7mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 66ns/163ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 105 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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