HGT1S3N60B3S
Harris Corporation
Harris Corporation
7A, 600V, UFS N-CHANNEL IGBT
$0.52
Available to order
Reference Price (USD)
1+
$0.52000
500+
$0.5148
1000+
$0.5096
1500+
$0.5044
2000+
$0.4992
2500+
$0.494
Exquisite packaging
Discount
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Maximize energy efficiency with HGT1S3N60B3S Single IGBTs by Harris Corporation, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose HGT1S3N60B3S for your next project and experience the Harris Corporation difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 7 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
- Power - Max: 33.3 W
- Switching Energy: 66µJ (on), 88µJ (off)
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 18ns/105ns
- Test Condition: 480V, 3.5A, 82Ohm, 15V
- Reverse Recovery Time (trr): 16 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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