RGW60TS65HRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.37
Available to order
Reference Price (USD)
1+
$6.37000
500+
$6.3063
1000+
$6.2426
1500+
$6.1789
2000+
$6.1152
2500+
$6.0515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with RGW60TS65HRC11 Single IGBTs from Rohm Semiconductor, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Rohm Semiconductor ensures RGW60TS65HRC11 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 64 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 178 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 36ns/107ns
- Test Condition: 400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
Related Products
onsemi
NGTD17T65F2SWK
Renesas Electronics America Inc
RJH30E2DPP-00#T2
IXYS
IXYA30N120A3HV
Infineon Technologies
FS75R07N2E4_B11
Renesas Electronics America Inc
RJH30E2DPP-Z0#T2
IXYS
MMIX1Y100N120C3H1
IXYS
IXGF32N170
Infineon Technologies
FD1200R12IE4B1S1BDMA1
Harris Corporation
HGTD10N40F1S
onsemi