FS200R07A02E3S6BKSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE HYBRID 28MDIP
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Infineon Technologies's FS200R07A02E3S6BKSA2 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase
- Voltage - Collector Emitter Breakdown (Max): 700 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 694 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: PG-MDIP-28
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