VS-50MT060WHTAPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 114A 658W MTP
$0.00
Available to order
Reference Price (USD)
1+
$57.75000
15+
$54.25000
30+
$52.50000
105+
$48.65000
Exquisite packaging
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The VS-50MT060WHTAPBF IGBT Module from Vishay General Semiconductor - Diodes Division delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Vishay General Semiconductor - Diodes Division for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 114 A
- Power - Max: 658 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 12-MTP Module
- Supplier Device Package: MTP
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