UPA2730TP-E2-AZ
Renesas
Renesas
UPA2730 - POWER FIELD-EFFECT TRA
$0.91
Available to order
Reference Price (USD)
1+
$0.90957
500+
$0.9004743
1000+
$0.8913786
1500+
$0.8822829
2000+
$0.8731872
2500+
$0.8640915
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose UPA2730TP-E2-AZ by Renesas. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with UPA2730TP-E2-AZ inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 40W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
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