HAT2196C-EL-E
Renesas
Renesas
HAT2196C - N-CHANNEL POWER MOSFE
$0.26
Available to order
Reference Price (USD)
1+
$0.25511
500+
$0.2525589
1000+
$0.2500078
1500+
$0.2474567
2000+
$0.2449056
2500+
$0.2423545
Exquisite packaging
Discount
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Discover high-performance HAT2196C-EL-E from Renesas, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, HAT2196C-EL-E delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CMFPAK
- Package / Case: 6-SMD, Flat Leads
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