SCT2160KEHRC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 22A, THD, SILICON-CARBIDE
$22.76
Available to order
Reference Price (USD)
1+
$22.76000
500+
$22.5324
1000+
$22.3048
1500+
$22.0772
2000+
$21.8496
2500+
$21.622
Exquisite packaging
Discount
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Optimize your electronic systems with SCT2160KEHRC11, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SCT2160KEHRC11 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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