UJ4SC075011B7S
UnitedSiC
UnitedSiC
750V/11MOHM, N-OFF SIC STACK CAS
$32.01
Available to order
Reference Price (USD)
1+
$32.01000
500+
$31.6899
1000+
$31.3698
1500+
$31.0497
2000+
$30.7296
2500+
$30.4095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with UJ4SC075011B7S, a high-quality Transistors - FETs, MOSFETs - Single from UnitedSiC. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, UJ4SC075011B7S provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
- Vgs(th) (Max) @ Id: 5.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
Nexperia USA Inc.
PSMN070-200B,118
Toshiba Semiconductor and Storage
TK7P60W5,RVQ
Panjit International Inc.
PJD45N03_L2_00001
Vishay Siliconix
SI2307CDS-T1-GE3
Toshiba Semiconductor and Storage
TK4R1A10PL,S4X
IXYS
IXFT32N100XHV
Alpha & Omega Semiconductor Inc.
AOB600A60L
Rohm Semiconductor
R6015FNX
Infineon Technologies
IPZA60R180P7XKSA1
Panjit International Inc.