SI2307CDS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 3.5A SOT23-3
$0.53
Available to order
Reference Price (USD)
3,000+
$0.16642
6,000+
$0.15628
15,000+
$0.14614
30,000+
$0.13904
75,000+
$0.13830
Exquisite packaging
Discount
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Boost your electronic applications with SI2307CDS-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI2307CDS-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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