Shopping cart

Subtotal: $0.00

TK7P60W5,RVQ

Toshiba Semiconductor and Storage
TK7P60W5,RVQ Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 7A DPAK
$1.70
Available to order
Reference Price (USD)
2,000+
$0.65520
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 60W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Panjit International Inc.

PJD45N03_L2_00001

Vishay Siliconix

SI2307CDS-T1-GE3

Toshiba Semiconductor and Storage

TK4R1A10PL,S4X

Alpha & Omega Semiconductor Inc.

AOB600A60L

Rohm Semiconductor

R6015FNX

Infineon Technologies

IPZA60R180P7XKSA1

Panjit International Inc.

PJD4NA65H_L2_00001

Vishay Siliconix

SI7431DP-T1-E3

Vishay Siliconix

SQJ860EP-T1_GE3

Top