TP65H150G4PS
Transphorm
Transphorm
GAN FET N-CH 650V TO-220
$6.24
Available to order
Reference Price (USD)
1+
$6.24030
500+
$6.177897
1000+
$6.115494
1500+
$6.053091
2000+
$5.990688
2500+
$5.928285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TP65H150G4PS by Transphorm. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TP65H150G4PS inquire now for more details!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Diodes Incorporated
DMN3060LW-13
Renesas Electronics America Inc
RJK0390DPA-WS#J53
IXYS
IXTH120N20X4
STMicroelectronics
STFU11N65M2
Renesas Electronics America Inc
RJK03P8DPA-00#J5A
onsemi
NTMKE4890NT1G
onsemi
NTMFSS1D5N06CL
Renesas Electronics America Inc
RJK0380DPA-00#J53
Diodes Incorporated
DMT10H009SCG-7
Renesas Electronics America Inc