NP20P06YLG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 60V 20A 8HSON
$0.66
Available to order
Reference Price (USD)
1+
$0.66466
500+
$0.6580134
1000+
$0.6513668
1500+
$0.6447202
2000+
$0.6380736
2500+
$0.631427
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NP20P06YLG-E1-AY by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NP20P06YLG-E1-AY inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2407 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 57W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
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Renesas Electronics America Inc