IXTH120N20X4
IXYS
IXYS
MOSFET
$10.21
Available to order
Reference Price (USD)
1+
$10.21000
500+
$10.1079
1000+
$10.0058
1500+
$9.9037
2000+
$9.8016
2500+
$9.6995
Exquisite packaging
Discount
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Boost your electronic applications with IXTH120N20X4, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXTH120N20X4 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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