TP65H150G4LSG-TR
Transphorm
Transphorm
650 V 13 A GAN FET
$5.74
Available to order
Reference Price (USD)
1+
$5.74000
500+
$5.6826
1000+
$5.6252
1500+
$5.5678
2000+
$5.5104
2500+
$5.453
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TP65H150G4LSG-TR by Transphorm. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TP65H150G4LSG-TR inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 2-PQFN (8x8)
- Package / Case: 2-PowerTSFN
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