TK2P90E,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR DPA
$0.53
Available to order
Reference Price (USD)
1+
$0.52822
500+
$0.5229378
1000+
$0.5176556
1500+
$0.5123734
2000+
$0.5070912
2500+
$0.501809
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage presents TK2P90E,RQ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TK2P90E,RQ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Diodes Incorporated
DMG7401SFG-7
Toshiba Semiconductor and Storage
TJ90S04M3L,LQ
Micro Commercial Co
SI3134KEA-TP
Rohm Semiconductor
R6509ENXC7G
Renesas Electronics America Inc
2SK2370(2)-A
Diodes Incorporated
DMTH4014LFVW-7
Taiwan Semiconductor Corporation
TSM60NC1R5CH C5G
Diodes Incorporated
DMN4010LFG-7
Infineon Technologies
BSC005N03LS5IATMA1
Diodes Incorporated