DMTH4014LFVW-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI333
$0.21
Available to order
Reference Price (USD)
1+
$0.21364
500+
$0.2115036
1000+
$0.2093672
1500+
$0.2072308
2000+
$0.2050944
2500+
$0.202958
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with DMTH4014LFVW-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMTH4014LFVW-7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
- FET Feature: Standard
- Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
Related Products
Taiwan Semiconductor Corporation
TSM60NC1R5CH C5G
Diodes Incorporated
DMN4010LFG-7
Infineon Technologies
BSC005N03LS5IATMA1
Diodes Incorporated
DMN10H220LQ-13
Fairchild Semiconductor
FDS8449-G
UnitedSiC
UF4C120070K3S
Harris Corporation
IRFP451
Renesas Electronics America Inc
RJK0233DPA-00#J5A
Toshiba Semiconductor and Storage
TK8R2E06PL,S1X
Diodes Incorporated