TK42A12N1,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 120V 42A TO220SIS
$1.56
Available to order
Reference Price (USD)
1+
$1.46000
50+
$1.16480
100+
$1.01920
500+
$0.79040
1,000+
$0.62400
2,500+
$0.58240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TK42A12N1,S4X, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TK42A12N1,S4X meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Toshiba Semiconductor and Storage
TK16G60W,RVQ
Vishay Siliconix
SI3469DV-T1-GE3
STMicroelectronics
STF10NM60ND
Fairchild Semiconductor
HUF76121S3ST
Fairchild Semiconductor
IRFP460C
Infineon Technologies
IRFSL4010PBF
Diodes Incorporated
DMN2080UCB4-7
Toshiba Semiconductor and Storage
SSM3K44FS,LF
Vishay Siliconix
IRFI820GPBF
IXYS