Shopping cart

Subtotal: $0.00

IRFSL4010PBF

Infineon Technologies
IRFSL4010PBF Preview
Infineon Technologies
MOSFET N-CH 100V 180A TO262
$4.34
Available to order
Reference Price (USD)
1+
$3.68000
10+
$3.30800
100+
$2.75070
500+
$2.26802
1,000+
$1.94625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

Related Products

Diodes Incorporated

DMN2080UCB4-7

Toshiba Semiconductor and Storage

SSM3K44FS,LF

Vishay Siliconix

IRFI820GPBF

Vishay Siliconix

SI4154DY-T1-GE3

Fairchild Semiconductor

HUFA75345P3

Fairchild Semiconductor

FQPF2N70

Top