STF10NM60ND
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 8A TO220FP
$2.48
Available to order
Reference Price (USD)
1+
$3.38000
50+
$2.72260
100+
$2.45030
500+
$1.90576
1,000+
$1.57905
2,500+
$1.47015
5,000+
$1.41570
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with STF10NM60ND by STMicroelectronics, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, STF10NM60ND ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
Related Products
Fairchild Semiconductor
HUF76121S3ST
Fairchild Semiconductor
IRFP460C
Infineon Technologies
IRFSL4010PBF
Diodes Incorporated
DMN2080UCB4-7
Toshiba Semiconductor and Storage
SSM3K44FS,LF
Vishay Siliconix
IRFI820GPBF
IXYS
IXTA15N50L2
onsemi
NTY100N10G
IXYS
IXFN94N50P2
Vishay Siliconix