TK190U65Z,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DTMOS VI TOLL PD=130W F=1MHZ
$3.10
Available to order
Reference Price (USD)
1+
$3.10000
500+
$3.069
1000+
$3.038
1500+
$3.007
2000+
$2.976
2500+
$2.945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance TK190U65Z,RQ from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, TK190U65Z,RQ delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 610µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
Related Products
Vishay Siliconix
IRFBC40PBF-BE3
Renesas Electronics America Inc
UPA2521T1H-T2-AT
Renesas Electronics America Inc
NP89N06PDK-E1-AY
Infineon Technologies
IPP60R380P6
Infineon Technologies
IRLB8314PBF
STMicroelectronics
STH2N120K5-2AG
IXYS
IXTP12N65X2
Vishay Siliconix
SIHFPS40N50L-GE3
Diodes Incorporated
DMT2004UFDF-7
onsemi