DMT2004UFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 24V 14.1A 6UDFN
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
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Discover DMT2004UFDF-7, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24 V
- Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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