STH2N120K5-2AG
STMicroelectronics
STMicroelectronics
MOSFET N-CH 1200V 1.5A H2PAK-2
$4.81
Available to order
Reference Price (USD)
1+
$4.81000
500+
$4.7619
1000+
$4.7138
1500+
$4.6657
2000+
$4.6176
2500+
$4.5695
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics presents STH2N120K5-2AG, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STH2N120K5-2AG delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
IXYS
IXTP12N65X2
Vishay Siliconix
SIHFPS40N50L-GE3
Diodes Incorporated
DMT2004UFDF-7
onsemi
HUF75321P3
Nexperia USA Inc.
BST82,235
Panjit International Inc.
PJA3404A_R1_00001
Rectron USA
RM60P60HD
Infineon Technologies
IRFB7537PBF
IXYS
IXTT16N50D2
onsemi