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TPHR9003NL1,LQ

Toshiba Semiconductor and Storage
TPHR9003NL1,LQ Preview
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=78W F=1MHZ
$1.69
Available to order
Reference Price (USD)
1+
$1.69000
500+
$1.6731
1000+
$1.6562
1500+
$1.6393
2000+
$1.6224
2500+
$1.6055
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 170W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN

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