SUM10250E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 250V 63.5A D2PAK
$3.03
Available to order
Reference Price (USD)
800+
$1.81825
1,600+
$1.70396
2,400+
$1.62396
5,600+
$1.56681
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SUM10250E-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SUM10250E-GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3002 pF @ 125 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NTGS3441BT1G
Infineon Technologies
IPA60R190C6XKSA1
Nexperia USA Inc.
2N7002,235
Nexperia USA Inc.
PSMN2R0-25MLDX
IXYS
IXTQ50N25T
Microchip Technology
DN3765K4-G
onsemi
NVH4L020N090SC1
Infineon Technologies
IRF2907ZPBF
Microchip Technology
VN0106N3-G-P003
Rohm Semiconductor