IRF2907ZPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 160A TO220AB
$3.67
Available to order
Reference Price (USD)
1+
$3.27000
10+
$2.94000
100+
$2.44500
500+
$2.01600
1,000+
$1.73000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IRF2907ZPBF from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IRF2907ZPBF delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Microchip Technology
VN0106N3-G-P003
Rohm Semiconductor
RQ5E050ATTCL
Vishay Siliconix
SI4483ADY-T1-GE3
IXYS
IXTA08N100P
STMicroelectronics
STB18N60M6
Fairchild Semiconductor
FQI27N25TU
STMicroelectronics
STW19NM50N
IXYS
IXTQ36N30P
Microchip Technology
APT1201R6SVFRG
Diodes Incorporated