NVH4L020N090SC1
onsemi
onsemi
SIC MOSFET 900V TO247-4L
$21.21
Available to order
Reference Price (USD)
1+
$21.21060
500+
$20.998494
1000+
$20.786388
1500+
$20.574282
2000+
$20.362176
2500+
$20.15007
Exquisite packaging
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Discover NVH4L020N090SC1, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 60A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
- FET Feature: -
- Power Dissipation (Max): 484W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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