STY145N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 138A MAX247
$48.63
Available to order
Reference Price (USD)
1+
$46.49000
30+
$40.06733
120+
$37.49958
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STY145N65M5 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STY145N65M5 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: MAX247™
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SQ3418EV-T1_GE3
STMicroelectronics
STP150N3LLH6
Fairchild Semiconductor
SSU1N50BTU
Vishay Siliconix
SQJ123ELP-T1_GE3
onsemi
FQB19N20TM
Rohm Semiconductor
RQ6E045BNTCR
onsemi
2N7002ET7G
IXYS
IXTT2N170D2
Rohm Semiconductor
SCT3017ALGC11
Wolfspeed, Inc.