STWA45N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 35A TO247
$9.30
Available to order
Reference Price (USD)
1+
$10.84000
30+
$8.88467
120+
$8.01792
510+
$6.71771
1,020+
$5.85090
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STWA45N65M5 by STMicroelectronics is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, STWA45N65M5 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SIRA36DP-T1-GE3
Alpha & Omega Semiconductor Inc.
AOT5N100
Vishay Siliconix
SI3474DV-T1-GE3
onsemi
NTD23N03RT4
Vishay Siliconix
IRFD9120PBF
Renesas Electronics America Inc
UPA1717G(0)-E1-AT
Infineon Technologies
IRF540NSTRRPBF
Toshiba Semiconductor and Storage
SSM3K127TU,LF
Fairchild Semiconductor
FQD7N20LTM
NXP USA Inc.