SI3474DV-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 3.8A 6TSOP
$0.46
Available to order
Reference Price (USD)
3,000+
$0.17310
6,000+
$0.16255
15,000+
$0.15200
30,000+
$0.14462
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SI3474DV-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SI3474DV-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
onsemi
NTD23N03RT4
Vishay Siliconix
IRFD9120PBF
Renesas Electronics America Inc
UPA1717G(0)-E1-AT
Infineon Technologies
IRF540NSTRRPBF
Toshiba Semiconductor and Storage
SSM3K127TU,LF
Fairchild Semiconductor
FQD7N20LTM
NXP USA Inc.
BUK9E4R4-80E,127
Infineon Technologies
AUIRFS4010-7P
IXYS
IXTH52P10P
Microchip Technology