NTD23N03RT4
onsemi

onsemi
MOSFET N-CH 25V 3.8A/17.1A DPAK
$0.10
Available to order
Reference Price (USD)
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$0.10000
500+
$0.099
1000+
$0.098
1500+
$0.097
2000+
$0.096
2500+
$0.095
Exquisite packaging
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Experience the power of NTD23N03RT4, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTD23N03RT4 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.76 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63