STS10P3LLH6
STMicroelectronics
STMicroelectronics
MOSFET P-CH 30V 10A 8SO
$0.90
Available to order
Reference Price (USD)
2,500+
$0.77850
5,000+
$0.74385
12,500+
$0.71910
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of STS10P3LLH6, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, STS10P3LLH6 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Nexperia USA Inc.
BUK762R4-60E,118
Vishay Siliconix
SIR584DP-T1-RE3
Vishay Siliconix
IRFI9640GPBF
Vishay Siliconix
SIR150DP-T1-RE3
Infineon Technologies
IRFI3205PBF
Microchip Technology
APT20M120JCU3
Vishay Siliconix
IRFIB6N60APBF
Infineon Technologies
BSS123NH6433XTMA1
Vishay Siliconix
SIHJ7N65E-T1-GE3
Renesas Electronics America Inc