SIR150DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 45V 30.9A/110A PPAK
$0.92
Available to order
Reference Price (USD)
1+
$0.92000
500+
$0.9108
1000+
$0.9016
1500+
$0.8924
2000+
$0.8832
2500+
$0.874
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SIR150DP-T1-RE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SIR150DP-T1-RE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.71mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
IRFI3205PBF
Microchip Technology
APT20M120JCU3
Vishay Siliconix
IRFIB6N60APBF
Infineon Technologies
BSS123NH6433XTMA1
Vishay Siliconix
SIHJ7N65E-T1-GE3
Renesas Electronics America Inc
UPA1818GR-9JG-E1-A
Fairchild Semiconductor
FQB4N20TM
onsemi
FCP13N60N
onsemi
NTD20N06LG
Rohm Semiconductor