BSS123NH6433XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
$0.50
Available to order
Reference Price (USD)
10,000+
$0.06591
30,000+
$0.06219
50,000+
$0.05587
100,000+
$0.05476
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSS123NH6433XTMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSS123NH6433XTMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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