STGB30H60DLFB
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
$2.03
Available to order
Reference Price (USD)
1,000+
$1.66000
2,000+
$1.59000
Exquisite packaging
Discount
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Maximize energy efficiency with STGB30H60DLFB Single IGBTs by STMicroelectronics, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose STGB30H60DLFB for your next project and experience the STMicroelectronics difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 393µJ (off)
- Input Type: Standard
- Gate Charge: 149 nC
- Td (on/off) @ 25°C: -/146ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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