HGT1S20N60B3S
Harris Corporation
Harris Corporation
40A, 600V, UFS N-CHANNEL IGBT
$2.79
Available to order
Reference Price (USD)
1+
$2.79000
500+
$2.7621
1000+
$2.7342
1500+
$2.7063
2000+
$2.6784
2500+
$2.6505
Exquisite packaging
Discount
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The HGT1S20N60B3S Single IGBT by Harris Corporation sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Harris Corporation for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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