IKZA50N65RH5XKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$9.64
Available to order
Reference Price (USD)
1+
$9.64000
500+
$9.5436
1000+
$9.4472
1500+
$9.3508
2000+
$9.2544
2500+
$9.158
Exquisite packaging
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Discover high-performance IKZA50N65RH5XKSA1 Single IGBTs from Infineon Technologies, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, IKZA50N65RH5XKSA1 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 305 W
- Switching Energy: 200µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 21ns/180ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-3
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