NTY100N10G
onsemi
onsemi
MOSFET N-CH 100V 123A TO264
$7.33
Available to order
Reference Price (USD)
1+
$7.33000
500+
$7.2567
1000+
$7.1834
1500+
$7.1101
2000+
$7.0368
2500+
$6.9635
Exquisite packaging
Discount
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Discover NTY100N10G, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10110 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 313W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264
- Package / Case: TO-264-3, TO-264AA
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